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Preliminary Datasheet
RJH60F4DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25C) REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 C Tc = 100 C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC j-c Tj Tstg Ratings 600 30 60 30 120 100 235.8 0.53 150 -55 to +150 Unit V V A A A A W C/W C C
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Page 1 of 6
RJH60F4DPK
Preliminary
Electrical Characteristics
(Tj = 25C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Min 4 Typ 1.4 1.7 1900 93 33 30 25 62 95 1.6 1.8 140 Max 100 1 8 1.82 2.1 Unit A A V V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 IF = 20 A Note3 IF = 40 A Note3 IF = 20 A diF/dt = 100 A/s
C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Page 2 of 6
RJH60F4DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000 120
Typical Output Characteristics
Ta = 25C Pulse Test 12 V 15 V 11 V
10 V
Collector Current IC (A)
Collector Current IC (A)
100
10 s
100 80 60
9.5 V
PW
10
= 10 0 s
1
9V 40 20 0 8.5 V
0.1 Ta = 25C 1 shot pulse 1 10 100 1000
VGE = 8 V
0 1 2 3 4 5
0.01
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
120
3.0 Ta = 25C Pulse Test 2.4 IC = 60 A 1.8
Collector Current IC (A)
100 80 60 40 20 0 4
VCE = 10 V Pulse Test
Tc = 75C
25C -25C
1.2 30 A 0.6 6 8 10 12 14 15 A 16 18 20
6
8
10
12
14
Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical)
8 VCE = 10 V
2.0 VGE = 15 V Pulse Test 1.8 IC = 60 A
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
7
1.6 30 A 1.4 15 A 1.2
6 IC = 10 mA 1 mA 5
1.0 -25
0
25
50
75
100 125 150
4 -25
0
25
50
75
100 125 150
Junction Temparature Tj (C)
Junction Temperature
Tj (C)
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Page 3 of 6
RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs. Diode Forward Current Characteristics (Typical)
100 10000 VGE = 0 V Pulse Test
Preliminary
Typical Capacitance vs. Colloctor to Emitter Voltage
Diode Forward Current IF (A)
Cies
Capacitance C (pF)
80
1000
60
100 Coes 10 VGE = 0 V f = 1 MHz Ta = 25C 0 50 100 150 200 250 300 Cres
40
20 0 0 1 2 3 4 5
1
Collector to Emitter Diode Forward Voltage VECF (V) Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
Colloctor to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
800
VGE VCE VCE = 600 V 300 V
16
1000 VCC = 300 V, VGE = 15 V Rg = 5 , Ta = 25C tf 100 td(off) td(on) 10 tr
600
12
400
8
200 VCE = 600 V 300 V 0 0 20 40 60
4
IC = 30 A 80
Switching Time t (ns)
0 100
1 1 10 100 1000
Gate Charge Qg (nC)
Colloctor Current IC (A)
Switching Characteristics (Typical) (2)
1000 IC = 30 A, RL = 10 VGE = 15 A, Ta = 25C
Switching Characteristics (Typical) (3)
1000 IC = 30 A, VGE = 15 A RL = 10 , Rg = 5
Switching Time t (ns)
Switching Time t (ns)
100
tf td(off) td(on) tr
tf 100 td(off) td(on) tr 10
10 1 10 100
0
20
40
60
80
100 120 140
Gate Resistance Rg ()
Case Temperature Tc (C)
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Page 4 of 6
RJH60F4DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Normalized Transient Thermal Impedance s (t)
10 Tc = 25C
Preliminary
1 D=1
0.5 0.2 0.1 0.05
j - c(t) = s (t) * j - c j - c = 0.53 C/W, Tc = 25 C PDM PW T D= PW T
0.1
1 shot pulse 0.02 0.01
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance s (t)
10 Tc = 25C
1
D=1 0.5 0.2 0.1
j - c(t) = s (t) * j - c j - c = 2C/W, Tc = 25C PDM
0.01
0.1 0.05
0.0
2
D= PW T
PW T
1 shot pulse
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor
PW (s) Waveform
90%
Vin
10% 90%
90%
Rg Vin = 15 V
D.U.T.
VCC
Ic td(on) ton 10% tr 10% td(off) toff tf
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
Page 5 of 6
RJH60F4DPK
Preliminary
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJH60F4DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
REJ03G1835-0200 Rev.2.00 Jun 17, 2010
0.3
Page 6 of 6
Notice
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